收藏本站
Micrel, Inc.
Absolute Maximum Ratings (1)
Supply Voltage (V DD )....................................................+20V
Input Voltage (V INA , V INB ) ................ V DD + 0.3V to GND - 5V
Enable Voltage (V ENA , V ENB )…..…….... ...0.3V to V DD + 0.3V
Junction Temperature (T J ) .........................-55°C to +150°C
Storage Temperature ................................ –65°C to +150°C
Lead Temperature (10 sec.)....................................... 300°C
ESD Rating................................. HBM = 2kV, MM = 200V (3)
MIC4223/MIC4224/MIC4225
Operating Ratings (2)
Supply Voltage (V DD )..................................... +4.5V to +18V
Junction Temperature (T J ) ........................ –40°C to +125°C
Package Thermal Resistance
EPAD MSOP ( θ JA ) .............................................60°C/W
SOIC ( θ JA ) ........................................................120°C/W
Electrical Characteristics
4.5V ≤ V DD ≤ 18V; C L = 2000pF. T A = 25°C, bold values indicate full operating junction temperature range, unless noted.
Symbol
Parameter
Condition
Min
Typ
Max
Units
Input
V IH
Logic 1 Input Voltage
2.4
2.2
V
V IL
Hysteresis
Logic 0 Input Voltage
1.95
0.25
0.8
V
V
I IN
Input Current
0 ≤ V IN ≤ V DD
–1
1
μA
Output
V IN = -5V
–10
-40
10
μA
mA
V OH
V OL
High Output Voltage
Low Output Voltage
I OUT = -10mA, V DD = 18V
I OUT = 10mA, V DD = 18V
V DD - 0.45
0.30
V
V
RO
IPK
Output Resistance – Source
Output Resistance – Sink
Peak Output Current
I OUT = -10mA, V DD = 18V
I OUT = 10mA, V DD = 18V
V DD = 8V
30
16
±3
45
30
?
A
V DD = 12V
±4
I
Latch-Up Protection
Withstand reverse current
>500
mA
Switching Time
t R
t F
t D1
t D2
Rise Time
Fall Time
Delay Time
Delay Time
Test Figure 1; C L = 2000pF
Test Figure 1; C L = 2000pF
Test Figure 1; C L = 2000pF
Test Figure 1; C L = 2000pF
15
15
25
35
40
40
45
50
ns
ns
ns
ns
Enable (ENA, ENB)
V EN_H
High Level Enable Voltage
LO to HI transition
2.4
1.9
V
V EN_L
Low Level Enable Voltage
HI to LO transition
1.55
0.8
V
Hysteresis
0.35
V
R EN
Enable Impedance
V DD = 18V, V ENA = V ENB = GND
100
k ?
t D3
t D4
Propagation Delay Time
Propagation Delay Time
C L = 2000pF
C L = 2000pF
20
45
60
150
ns
ns
Power Supply
I SH
I SL
Power Supply Current
Power Supply Current
V INA = V INB = 3.0V, V ENA = V ENB = open
V INA = V INB = 0.0V, V ENA = V ENB = open
1.7
0.7
2.5
1.5
mA
mA
Notes:
1. Exceeding the absolute maximum rating may damage the device.
2. The device is not guaranteed to function outside its operating rating.
3. Devices are ESD sensitive. Handling precautions recommended. Human body model, 1.5k ? in series with 100pF.
June 2009
3
M9999-061109-A
(408) 944-0800
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
MIC4417YM4 TR IC DRIVER MOSF LOW SIDE SOT143-4
MIC4420ZT IC DRIVER MOSFET 6A LS TO-220-5
MIC4422AYN IC DRIVER MOSFET 9A LS 8-DIP
MIC4422ZT IC DRIVER MOSFET 9A LS TO-220-5
MIC4424YWM IC DRIVER MOSFET 3A DUAL 16-SOIC
MIC4427YM IC DRIVER MOSFET DUAL 1.5A 8SOIC
MIC4451ZT IC DRIVER MOSFET 12A HS TO220-5
MIC4467YWM IC DRIVER MOSF QUAD 1.2A 16-SOIC
相关代理商/技术参数
MIC4223YM TR 功能描述:功率驱动器IC Dual 4A High Speed MOSFET Drivers with Enable RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MIC4223YMME 功能描述:功率驱动器IC Dual 4A High Speed MOSFET Drivers with Enable RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MIC4223YMME TR 功能描述:功率驱动器IC Dual 4A High Speed MOSFET Drivers with Enable RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MIC4224 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Dual 4A, 4.5V to 18V, 15ns Switch Time, Low-Side MOSFET Drivers with Enable
MIC4224YM 功能描述:功率驱动器IC Dual 4A High Speed MOSFET Drivers with Enable RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MIC4224YM TR 功能描述:功率驱动器IC Dual 4A High Speed MOSFET Drivers with Enable RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MIC4224YMME 功能描述:功率驱动器IC Dual 4A High Speed MOSFET Drivers with Enable RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MIC4224YMME TR 功能描述:功率驱动器IC Dual 4A High Speed MOSFET Drivers with Enable RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube